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| 3 V/5 V CMOS 0.5 SPDT/2:1 Mux in SC70 ADG849 FEATURES Ultralow on-resistance: 0.5 typical 0.8 maximum at 5 V supply Excellent audio performance, ultralow distortion: 0.13 typical 0.24 maximum RON flatness High current carrying capability: 400 mA continuous current 600 mA peak current at 5 V Automotive temperature range: -40C to +125C Rail-to-rail operation Typical power consumption (<0.01 W) Pin-compatible upgrade for the ADG749 and ADG779 FUNCTIONAL BLOCK DIAGRAM ADG849 S2 D S1 IN SWITCHES SHOWN FOR A LOGIC 1 INPUT 04737-0-001 Figure 1. APPLICATIONS Cellular phones PDAs Battery-powered systems Audio and video signal routing Modems PCMCIA cards Hard drives Relay replacement GENERAL DESCRIPTION The ADG849 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer ultralow on-resistance values of typically 0.5 . This design makes the ADG849 an ideal solution for applications that require minimal distortion through the switch. The ADG849 also has the capability of carrying large amounts of current, typically 600 mA at 5 V operation. Each switch of the ADG849 conducts equally well in both directions when on. The device exhibits break-before-make switching action, thus preventing momentary shorting when switching channels. The ADG849 is available in a tiny, 6-lead SC70 package, making it the ideal candidate for space-constrained applications. PRODUCT HIGHLIGHTS 1. 2. 3. 4. 5. Very low on-resistance, 0.5 typical. Tiny, 6-lead SC70 package. Low power dissipation. The CMOS construction ensures low power dissipation. High current carrying capability. Low THD + noise (0.01% typ). Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 (c) 2004 Analog Devices, Inc. All rights reserved. ADG849 TABLE OF CONTENTS Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 5 ESD Caution.................................................................................. 5 Pin Configuration and Function Descriptions............................. 6 Typical Performance Characteristics ..............................................7 Test Circuits........................................................................................9 Outline Dimensions ....................................................................... 11 Ordering Guide .......................................................................... 11 REVISION HISTORY 7/04--Revision 0: Initial Version Rev. 0| Page 2 of 12 ADG849 SPECIFICATIONS Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V1 Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Channel On Leakage, ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tBBM +25C -40C to +85C -40C to +125C 0 V to VDD 0.5 0.6 0.05 0.095 0.13 0.18 0.01 0.04 0.11 0.22 0.125 0.24 0.7 0.8 Unit V typ max typ max typ max nA typ nA typ Test Conditions/Comments VS = 0 V to VDD, IDS = -100 mA See Figure 15 VS = 0.85 V, IDS = -100 mA VS = 0 V to VDD, IDS = -100 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 16 VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 17 2.0 0.8 0.005 0.1 2.5 11 15 9 13 5 V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ dB typ % pF typ pF typ VDD = 5.5 V, Digital Inputs = 0 V or 5.5 V A typ A max VIN = VINL or VINH 17 14 18 15 RL = 50 , CL = 35 pF VS = 3 V, see Figure 18 RL = 50 , CL = 35 pF VS = 3 V, see Figure 18 RL = 50 , CL = 35 pF, VS1 = VS2 = 3 V, see Figure 19 VS = 0 V, RS = 0 , CL = 1 nF, see Figure 20 RL = 50 , CL = 5 pF, f = 100 kHz see Figure 21 RL = 50 , CL = 5 pF, f = 100 kHz, see Figure 22 RL = 50 , CL = 5 pF, see Figure 23 RL = 50 , CL = 5 pF, see Figure 23 RL = 32 , f = 20 Hz to 20 kHz, Vs = 2 V p-p 1 Charge Injection Off Isolation Channel-to-Channel Crosstalk Bandwidth: -3 dB Insertion Loss THD + N CS (Off ) CD, CS (On) POWER REQUIREMENTS IDD 50 -64 -64 38 0.04 0.01 52 145 0.001 1.0 1 2 The temperature range for the Y version is -40C to +125C. Guaranteed by design, not subject to production test. Rev. 0| Page 3 of 12 ADG849 Table 2. VDD = 2.7 V to 3.6 V, GND = 0 V1 Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Channel On Leakage, ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tBBM +25C -40C to +85C -40C to +125C 0 V to VDD 0.72 1.1 0.05 0.095 0.3 0.1 0.01 0.11 0.125 1.1 1.2 Unit V typ max typ max typ nA typ nA typ Test Conditions/Comments VS = 0 V to VDD, IDS = -100 mA See Figure 15 VS = 1.5 V, IDS = -100 mA VS = 0 V to VDD, IDS = -100 mA VDD = 3.6 V VS = 3 V/1 V, VD = 1 V/3 V, see Figure 16 VS = VD = 1 V, or VS = VD = 3 V; see Figure 17 2.0 0.8 0.7 0.005 0.1 2.5 16 22 13 18 7 V min V max V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ dB typ % pF typ pF typ VDD = 3 V to 3.6 V VDD = 2.7 V VIN = VINL or VINH 24 20 26 22 RL = 50 , CL = 35 pF VS = 1.5 V, see Figure 18 RL = 50 , CL = 35 pF VS = 1.5 V, see Figure 18 RL = 50 , CL = 35 pF, VS1 = VS2 = 1.5 V, see Figure 19 VS = 0 V, RS = 0 , CL = 1 nF, see Figure 20 RL = 50 , CL = 5 pF, f = 100 kHz, see Figure 21 RL = 50 , CL = 5 pF, f = 100 kHz, see Figure 22 RL = 50 , CL = 5 pF, see Figure 23 RL = 50 CL = 5 pF, see Figure 23 RL = 32 , f = 20 Hz to 20 kHz, Vs = 1 V p-p f = 1 MHz f = 1 MHz VDD = 3.6 V Digital Inputs = 0 V or 3.6 V 1 Charge Injection Off Isolation Channel-to-Channel Crosstalk Bandwidth: -3 dB Insertion Loss THD + N CS (Off ) CD, CS (On) POWER REQUIREMENTS IDD 30 -64 -64 38 0.04 0.02 55 147 0.001 1.0 A typ A max 1 2 The temperature range for the Y version is -40C to +125C. Guaranteed by design, not subject to production test. Rev. 0| Page 4 of 12 ADG849 ABSOLUTE MAXIMUM RATINGS Table 3. TA = 25C, unless otherwise noted Parameter VDD to GND Analog Inputs1 Digital Inputs1 Peak Current, S or D Continuous Current, S or D Operating Temperature Range Extended Storage Temperature Range Junction Temperature SC70 Package JA Thermal Impedance JC Thermal Impedance Reflow Soldering Peak Temperature Time at Peak Temperature Rating -0.3 V to +7 V -0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first -0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 600 mA (pulsed at 1 ms, 10% duty cycle maximum) 400 mA -40C to +125C -65C to +150C +150C 332C/W 120C/W 260(0/-5)C 10 sec to 40 sec Table 4. Truth Table IN 0 1 Switch S1 On Off Switch S2 Off On Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 1 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. 0| Page 5 of 12 ADG849 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS IN 1 VDD 2 ADG849 6 S2 Figure 2. Pin Configuration Table 5. Terminology Mnemonic VDD GND IDD S D IN RON RON RFLAT(ON) IS (Off ) ID, IS (On) VD (VS) VINL VINH IINL (IINH) CS (Off ) CD, CS (On) tON tOFF tBBM Charge Injection Crosstalk Off Isolation Bandwidth On-Response Insertion Loss THD + N Function Most Positive Power Supply Potential. Ground (0 V) Reference. Positive Supply Current. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Ohmic Resistance between D and S. On-Resistance Match Between any Two Channels i.e., RON Maximum to RON Minimum. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the Switch Off. Channel Leakage Current with the Switch On. Analog Voltage on Terminals D, S. Maximum Input Voltage for Logic 0. Minimum Input Voltage for Logic 1. Input Current of the Digital Input. Off Switch Source Capacitance. Measured with reference to ground. On Switch Capacitance. Measured with reference to ground. Delay time between the 50% and 90% points of the digital input and switch on condition. Delay time between the 50% and 90% points of the digital input and switch off condition. On or off time measured between the 80% points of both switches when switching from one to another. A measure of the glitch impulse transfered from the digital input to the analog output during switching. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. A measure of unwanted signal coupling through an off switch. The frequency at which the output is attenuated by 3 dB. The frequency response of the on switch. The loss due to the on-resistance of the switch. The ratio of harmonic amplitudes plus the noise of a signal to the fundamental. Rev. 0| Page 6 of 12 04737-0-002 D TOP VIEW 5 (Not to Scale) GND 3 4 S1 ADG849 TYPICAL PERFORMANCE CHARACTERISTICS 0.6 TA = 25C 0.5 4.5V 0.4 RON () ON RESISTANCE () 1.0 0.9 0.8 0.7 +85C 0.6 +25C 0.5 -40C 0.4 0.3 0.2 0.1 04737-0-003 5V 5.5V +125C 0.3 0.2 0.1 0 0 1 2 3 VS/VD (V) 4 5 6 0 0 0.5 1.0 1.5 VS/VD (V) 2.0 2.5 3.0 Figure 3. On-Resistance vs. VD/VS, VDD = 5 V 10% Figure 6. On-Resistance vs. Temperature, VDD = 3 V 0.9 0.8 2.5V 0.7 2.7V 0.6 RON () 120 VDD = 5V 100 3.3V 3.6V 0.5 0.4 0.3 0.2 LEAKAGE (nA) 3V 80 60 ID, IS (ON) 40 20 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VS/VD (V) 04737-0-004 IS (OFF) 0 10 20 40 60 80 TEMPERATURE (C) 100 120 04737-0-017 04737-0-018 Figure 4. On-Resistance vs. VD/VS, VDD = 2.5 V to 3.6 V Figure 7. Leakage Currents vs. Temperature, VDD = 5 V 0.8 0.7 0.6 ON RESISTANCE () 90 VDD = 3V 80 70 +125C LEAKAGE (nA) 0.5 0.4 +85C +25C -40C 60 ID, IS (ON) 50 40 30 20 IS (OFF) 10 0.3 0.2 0.1 04737-0-005 0 0 0.5 1.0 1.5 2.0 2.5 VS/VD (V) 3.0 3.5 4.0 4.5 5.0 0 10 20 40 60 80 TEMPERATURE (C) 100 120 Figure 5. On-Resistance vs. Temperature, VDD = 5 V Figure 8. Leakage Currents vs. Temperature, VDD = 3 V Rev. 0| Page 7 of 12 04737-0-006 ADG849 250 TA = 25C 0 -10 200 CHARGE INJECTION (pC) VDD = 5V -20 OFF ISOLATION (dB) -30 -40 -50 -60 -70 150 100 50 VDD = 3V 04737-0-011 -80 -90 10k 100k 1M FREQUENCY (MHz) 10M 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 DRAIN VOLTAGE (V) 100M Figure 9. Charge Injection Figure 12. Off Isolation vs. Frequency 20 18 VDD = 3.3V 16 14 TIME (ns) 0 -10 -20 tON CROSSTALK (dB) tOFF VDD = 5V tON tOFF 12 10 8 6 4 2 -30 -40 -50 -60 -70 04737-0-012 0 -40 -80 10k 100k 1M FREQUENCY (MHz) 10M -20 0 20 40 60 TEMPERATURE (C) 80 100 120 100M Figure 10. tON/tOFF vs. Temperature Figure 13. Crosstalk vs. Frequency 1 0 -1 ON RESPONSE (dB) 0.10 0.09 0.08 0.07 VDD = 5V -2 THD + N (%) -3 -4 -5 -6 -7 -8 -9 10k 100k 1M FREQUENCY (MHz) 10M TA = 25C VDD = 5V/3V 100M 0.06 0.05 0.04 0.03 0.02 0.01 2V p-p 04737-0-019 1V p-p 04737-0-013 0 20 40 60 80 100 120 140 160 180 200 FREQUENCY (kHz) Figure 11. Bandwidth Figure 14. Total Harmonic Distortion + Noise Rev. 0| Page 8 of 12 04737-0-015 TA = 25C VDD = 5V/3V 04737-0-014 TA = 25C VDD = 5V/3V ADG849 TEST CIRCUITS IDS IS (OFF) S V1 S VS D 04737-0-008 ID (OFF) D 04737-0-009 ID (ON) NC A VD RON = V1/IDS Figure 15. On-Resistance Figure 16. Off-Leakage Figure 17. On-Leakage VDD 0.1F VDD VS S2 S1 D RL 50 GND VOUT CL 35pF VIN 50% 50% IN 90% 90% 04449-0-022 VOUT tON tOFF Figure 18. Switching Times, tON, tOFF VDD 0.1F 50% VDD VS S2 S1 50% VIN D RL 50 VOUT CL 35pF 0V VOUT 80% 80% IN GND tBBM tBBM 04449-0-023 Figure 19. Break-Before-Make Time Delay, tBBM VDD SW ON S2 SW OFF VIN NC VS IN D S1 VOUT 1nF VOUT GND VOUT QINJ = CL x VOUT Figure 20. Charge Injection Rev. 0| Page 9 of 12 04449-0-024 04449-0-021 VS VD S D ADG849 VDD 0.1F NETWORK ANALYZER 50 VS VOUT 04449-0-025 VDD 0.1F VDD NETWORK ANALYZER VOUT RL 50 50 VS S1 VDD NC S2 D S1 50 D S2 R 50 RL 50 GND GND VOUT VS 04737-0-016 OFF ISOLATION = 20 LOG VOUT VS CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG Figure 21. Off Isolation Figure 22. Channel-to-Channel Crosstalk VDD 0.1F NETWORK ANALYZER 50 VS D 04449-0-026 VDD S2 S1 GND RL 50 VOUT INSERTION LOSS = 20 LOG VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 23. Bandwidth Rev. 0| Page 10 of 12 ADG849 OUTLINE DIMENSIONS 2.00 BSC 6 5 2 4 1.25 BSC 1 3 2.10 BSC PIN 1 0.65 BSC 1.30 BSC 1.00 0.90 0.70 1.10 MAX 0.22 0.08 0.30 0.15 0.10 COPLANARITY COMPLIANT TO JEDEC STANDARDS MO-203AB SEATING PLANE 8 4 0 0.10 MAX 0.46 0.36 0.26 Figure 24. 6-Lead SC70 Package [KS-6] Dimensions shown in Millimeters ORDERING GUIDE Model ADG849YKSZ-500RL72 ADG849YKSZ-REEL2 ADG849YKSZ-REEL72 Temperature Range -40C to +125C -40C to +125C -40C to +125C Package Description SC70 (Plastic Surface Mount) SC70 (Plastic Surface Mount) SC70 (Plastic Surface Mount) Package Option KS-6 KS-6 KS-6 Branding1 SNA SNA SNA 1 2 Branding on all packages is limited to three characters due to space constraints. Z = Pb-free part. Rev. 0| Page 11 of 12 ADG849 NOTES (c) 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D04737-0-7/04(0) Rev. 0| Page 12 of 12 This datasheet has been download from: www..com Datasheets for electronics components. |
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